isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifier

Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A APPLICATIONS ·Switching ·Regulators ·Inverters ·Motor controls ·Solenoid/Relay drivers

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifier

Series 0517 Pin-Line Vertisocket w/Collet Contacts

FEATURES • Mount components, jumpers, etc., at right angle to PC board • Available in 1 to 25 positions; cuttable to any number desired

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

Nytyes® with Stainless Steel Locking Device

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Nytyes® with Stainless Steel Locking Device

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