isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifier

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. ■ SGS-THOMSON PREFERRED SALESTYPE

NPN SILICON POWER TRANSISTOR

SWITCHMODE™ Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, S

POWER TRANSISTORS(12A,300-400V,100W)

SWITCHMODE SERIES NPN POWER TRANSISTORS 12 AMPERE TRANSISTOR 300-400 VOLTS 100 WATTS

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Sol

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.