位置：首页 > IC中文资料 > ISBTS640S2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Smart Sense High-Side Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro | Infineon 英飞凌 |   | ||
Smart Sense High-Side Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro | Infineon 英飞凌 | | ||
Smart Sense High-Side Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro | Infineon 英飞凌 | | ||
Smart Sense High-Side Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro | Infineon 英飞凌 | | ||
Smart Sense High-Side Power Switch For Industrial Applications General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protec | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/实单来谈出售 |
25+ |
TO-263-7 |
32360 |
INFINEON/实单来谈出售全新特价BTS640S2GATMA1即刻询购立享优惠#长期有货 |
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INENOI |
20+ |
SOT263-7 |
14030 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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INFINEON/英飞凌 |
21+ |
SOT263-7 |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
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Infineon(英飞凌) |
2021+ |
SMD |
499 |
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INFINEON |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
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Infineon/英飞凌 |
24+ |
SMD |
30000 |
原装正品公司现货,假一赔十! |
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Infineon(英飞凌) |
24+ |
TO263-7 |
1424 |
原厂直供,支持账期,免费供样,技术支持 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEO |
25+ |
TO263-7 |
586 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INF |
24+ |
SOT263-7 |
8100 |
绝对原装现货,价格低,欢迎询购! |
ISBTS640S2规格书下载地址
ISBTS640S2参数引脚图相关
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- ISC012N04NM6ATMA1
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- ISC012N04LM6ATMA1
- ISC012N04LM6
- ISC011N06LM5ATMA1
- ISC011N06LM5
- ISC011N03L5SATMA1
- ISC011N03L5S
- ISC0115
- ISC010N06NM5ATMA1
- ISC010N06NM5
- ISC010N04NM6ATMA1
- ISC010N04NM6
- ISC009N06LM5ATMA1
- ISC009N06LM5
- ISC007N04NM6ATMA1
- ISC007N04NM6
- ISC.MRU200I-USB-EU
- ISBTS640S2G
- ISB-TS45H/MTP10-B7F55
- ISB-TS45H
- IS-B-MQ
- IS-B-MD
- IS-B-M
- ISBK160128R8000
- ISBK140128R8000
- IS-B-FQ
- IS-B-FF
- IS-B-FD
- IS-B-F
- ISB-E75-0-TLM-E
- ISB-E70-0-TRM-E
- ISB-E68-0-TRM-E
- ISB-E64-0-TBM-E
- ISB-E63-0-TRM-E
- ISB-E59-O-TBM-E
- ISB-E59-0-TBM-E
- ISBE56-1TRME
- ISB-E56-1-TRM-E
- ISBB3
- ISBB1
- ISBA3
- ISBA1
- ISB40
- ISB35
- ISB20
- ISB01
- ISAC-SX
- ISAB3
- ISAB1
- ISAA3
- ISAA1
- ISA60
- ISA40
- ISA2424
- ISA2415
- ISA2412
- ISA2409
- ISA2405
ISBTS640S2数据表相关新闻
ISC078N12NM6ATMA1
ISC078N12NM6ATMA1
2024-9-24ISA2415-H坚持十来年只做原装货
ISA2415-H坚持十来年只做原装货
2024-9-11ISD1964SYI
ISD1964SYI
2023-5-5ISD1964SYI01
ISD1964SYI01
2023-5-5IS916EN
IS916EN 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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