| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4096-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW\nThe IS93C66-3 is a low cost 4,096-bit, non-volatile, serial E2PROM. It is fabricated using ISSI's advanced CMOS E2PROM technology. The IS93C66-3 provides efficient non-volatile read/write memory arranged as 256 registers of 16 bits each. Seven 11-bit instructions control the operation of t • State-of-the-art architecture\n— Non-volatile data storage\n— Low voltage operation:\n3.0V (Vcc = 2.7V to 6.0V)\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• Low voltage read operation\n— Down to 2.7V\n• Hardware and software write protection\n— Defaults to; | ISSI 矽成半导体 |   | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM 文件：83.04 Kbytes Page：10 Pages | ISSI 矽成半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC EEPROM 4KBIT SPI 3MHZ 8SOIC 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC EEPROM 4K SPI 3MHZ 8SOIC | ISSI 矽成半导体 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | |
IS93C66产品属性
- 类型
描述
- 存储器格式：
EEPROM
- 技术：
EEPROM
- 存储容量：
4Kb （512 x 8，256 x 16）
- 时钟频率：
3MHz
- 写周期时间 - 字，页：
5ms
- 存储器接口：
SPI
- 电压 - 电源：
1.8V ~ 5.5V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
8-SOIC（0.154\，3.90mm 宽）
- 供应商器件封装：
8-SOIC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OTHERS |
10+ |
QFN |
1010 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISOCOM |
26+ |
DIP |
20000 |
公司只有正品,实单来谈 |
|||
OTHERS |
10+ |
QFN64 |
880000 |
明嘉莱只做原装正品现货 |
|||
ISOCOM |
18+ |
DIP-6 |
2090 |
全新 发货1-2天 |
|||
OTHERS |
24+ |
QFN64 |
5000 |
全新原装正品,现货销售 |
|||
OTHERS |
26+ |
QFN64 |
1556 |
一级代理优势现货,全新正品直营店 |
|||
ISOCOM |
23+ |
DIP |
98900 |
原厂原装正品现货!! |
|||
ISOCOM |
25+ |
DIPSOP6 |
20000 |
全新原装正品支持含税 |
|||
ISOCOM |
24+ |
DIP-6 |
9600 |
原装现货,优势供应,支持实单! |
|||
OTHERS |
23+ |
QFN64 |
6000 |
专业配单保证原装正品假一罚十 |
IS93C66规格书下载地址
IS93C66参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
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- jumper
- jtag接口
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- j111
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- isd1420
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- IS942
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- IS93C66A-3GRLA3
- IS93C66A-3GRI
- IS93C66A-2ZLI-TR
- IS93C66A-2ZLI
- IS93C66A-2ZI-TR
- IS93C66A-2ZI
- IS93C66A-2PLI
- IS93C66A-2PI
- IS93C66A-2GRLI-TR
- IS93C66A-2GRLI
- IS93C66A-2GRI-TR
- IS93C66A-2GRI
- IS93C66A
- IS93C66-3PI
- IS93C66-3P
- IS93C66-3GRI
- IS93C66-3GR
- IS93C66-3GI
- IS93C66-3G
- IS93C66-3
- IS93C56A-PA
- IS93C56A-GRA
- IS93C56A-3ZLA3
- IS93C56A-3ZI
- IS93C56A-3PLA3
- IS93C56A-3PI
- IS93C56A-3GRLA3
- IS93C56A-3GRI
- IS93C56A-3GRA
- IS93C56A-3GI
- IS93C56A-2ZLI-TR
- IS93C56A-2ZLI
- IS93C56A-2ZI-TR
- IS93C56A-2ZI
- IS93C56A-2PLI
- IS93C56A-2PI
- IS93C56A-2GRLI-TR
- IS93C56A-2GRLI
- IS93C56A-2GRI-TR
- IS93C56A-2GRI
- IS924
- IS923
- IS922
- IS921
- IS920
- IS900
- IS89C52
- IS89C51
- IS849X
- IS82C89
- IS82C88
- IS82C85
- IS82C82
- IS82C54
- IS82C52
- IS80C52
- IS80C51
- IS80C32
- IS80C31
- IS733H
IS93C66数据表相关新闻
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ISC078N12NM6ATMA1
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ISA2415-H坚持十来年只做原装货
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ISD1964SYI
2023-5-5IS82C55AZ 原装现货
IS82C55AZ 可做含税，支持实单
2021-9-22IS916EN
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2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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