2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC EEPROM 4KBIT SPI 3MHZ 8SOIC 集成电路（IC） 存储器

IC EEPROM 4K SPI 3MHZ 8SOIC

4K Microwire Compatible Serial EEPROM

Features: • Low-Power CMOS Technology • ORG Pin to Select Word Size for ‘66C’ Version • 512 x 8-bit Organization ‘A’ Devices (no ORG) • 256 x 16-bit organization ‘B’ Devices (no ORG) • Self-tImed Erase/Write Cycles (including Auto-Erase) • Automatic Erase All (ERAL) Before Write All (WRAL)

2K/4K 5.0V CMOS Serial EEPROM

FEATURES * Low power CMOS technology * ORG pin selectable memory organization - 256 x8 or 128 x 16 bit organization (93C56) - 512 x 8 or 256 x 16 bit organization (93C66) * Single 5 volts only operation * Max clock at 2 MHz * Seltimed ERASE and WRITE cycles * Automatic ERASE before WRITE

4K-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description FM93C66A is a 4096-bit CMOS non-volatile EEPROM organized as 256 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of sta

4096-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description FM93C66 is a 4096-bit CMOS non-volatile EEPROM organized as 256 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of stan

4K 5.0V Automotive Temperature Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93XX66A/B/C devices are 4K bit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA66C, 93LC66C or 93C66C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit co