| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS93C66A | 2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 |   | |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin | ISSI 矽成半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC EEPROM 4KBIT SPI 3MHZ 8SOIC 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC EEPROM 4K SPI 3MHZ 8SOIC | ISSI 矽成半导体 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | | ||
Electrically Erasable Programmable Memories 文件：290.6 Kbytes Page：8 Pages | NSC 国半 | |
IS93C66A产品属性
- 类型
描述
- 存储器格式：
EEPROM
- 技术：
EEPROM
- 存储容量：
4Kb （512 x 8，256 x 16）
- 时钟频率：
3MHz
- 写周期时间 - 字，页：
5ms
- 存储器接口：
SPI
- 电压 - 电源：
1.8V ~ 5.5V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
8-SOIC（0.154\，3.90mm 宽）
- 供应商器件封装：
8-SOIC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
SOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ISSI |
23+ |
SOP8 |
4850 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
0521+ |
DIP8 |
93 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
23+ |
DIP8 |
8000 |
专注配单,只做原装进口现货 |
|||
ISSI |
最新 |
DIP-8 |
10000 |
公司进口原装特价处理 |
|||
ISSI |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
|||
ISSIINTEGRATEDSILICONSOLUTIONI |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI |
25+ |
SOP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
ISSI, Integrated Silicon Solut |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
ISSI |
23+ |
SOP8 |
8560 |
受权代理!全新原装现货特价热卖! |
IS93C66A芯片相关品牌
IS93C66A规格书下载地址
IS93C66A参数引脚图相关
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- IS93C76A
- IS93C66A-PA
- IS93C66A-GRA
- IS93C66A-3ZLA3
- IS93C66A-3ZI
- IS93C66A-3PLA3
- IS93C66A-3PI
- IS93C66A-3PA
- IS93C66A-3GRLA3
- IS93C66A-3GRI
- IS93C66A-2ZLI-TR
- IS93C66A-2ZLI
- IS93C66A-2ZI-TR
- IS93C66A-2ZI
- IS93C66A-2PLI
- IS93C66A-2PI
- IS93C66A-2GRLI-TR
- IS93C66A-2GRLI
- IS93C66A-2GRI-TR
- IS93C66A-2GRI
- IS93C66-3PI
- IS93C66-3P
- IS93C66-3GRI
- IS93C66-3GR
- IS93C66-3GI
- IS93C66-3G
- IS93C66-3
- IS93C66
- IS93C56A-PA
- IS93C56A-GRA
- IS93C56A-3ZLA3
- IS93C56A-3ZI
- IS93C56A-3PLA3
- IS93C56A-3PI
- IS93C56A-3GRLA3
- IS93C56A-3GRI
- IS93C56A-3GRA
- IS93C56A-3GI
- IS93C56A-2ZLI-TR
- IS93C56A-2ZLI
- IS924
- IS923
- IS922
- IS921
- IS920
- IS900
- IS89C52
- IS89C51
- IS849X
- IS82C89
- IS82C88
- IS82C85
- IS82C82
- IS82C54
- IS82C52
- IS80C52
- IS80C51
- IS80C32
- IS80C31
- IS733H
IS93C66A数据表相关新闻
ISC078N12NM6ATMA1
ISC078N12NM6ATMA1
2024-9-24ISA2415-H坚持十来年只做原装货
ISA2415-H坚持十来年只做原装货
2024-9-11ISD1964SYI
ISD1964SYI
2023-5-5IS82C55AZ 原装现货
IS82C55AZ 可做含税，支持实单
2021-9-22IS916EN
IS916EN 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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