ElectricallyErasableProgrammableMemories

文件：290.6 Kbytes Page：8 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC EEPROM 4KBIT SPI 1MHZ 14SOIC 集成电路（IC） 存储器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC EEPROM 4KBIT SPI 1MHZ 8SO 集成电路（IC） 存储器

ElectricallyErasableProgrammableMemories

文件：290.6 Kbytes Page：8 Pages

ElectricallyErasableProgrammableMemories

文件：290.6 Kbytes Page：8 Pages

4K-BitSerialCMOSEEPROM(MICROWIRE??SynchronousBus)

GeneralDescription FM93C66Aisa4096-bitCMOSnon-volatileEEPROMorganizedas256x16-bitarray.ThisdevicefeaturesMICROWIREinterfacewhichisa4-wireserialbuswithchipselect(CS),clock(SK),datainput(DI)anddataoutput(DO)signals.Thisinterfaceiscompatibletomanyofsta

4096-BitSerialCMOSEEPROM(MICROWIRE??SynchronousBus)

GeneralDescription FM93C66isa4096-bitCMOSnon-volatileEEPROMorganizedas256x16-bitarray.ThisdevicefeaturesMICROWIREinterfacewhichisa4-wireserialbuswithchipselect(CS),clock(SK),datainput(DI)anddataoutput(DO)signals.Thisinterfaceiscompatibletomanyofstan

4KMicrowireCompatibleSerialEEPROM

Features: •Low-PowerCMOSTechnology •ORGPintoSelectWordSizefor‘66C’Version •512x8-bitOrganization‘A’Devices(noORG) •256x16-bitorganization‘B’Devices(noORG) •Self-tImedErase/WriteCycles(including Auto-Erase) •AutomaticEraseAll(ERAL)BeforeWriteAll (WRAL)

2K/4K5.0VCMOSSerialEEPROM

FEATURES *LowpowerCMOStechnology *ORGpinselectablememoryorganization -256x8or128x16bitorganization(93C56) -512x8or256x16bitorganization(93C66) *Single5voltsonlyoperation *Maxclockat2MHz *SeltimedERASEandWRITEcycles *AutomaticERASEbeforeWRITE

4K5.0VAutomotiveTemperatureMicrowireSerialEEPROM

Description: TheMicrochipTechnologyInc.93XX66A/B/Cdevicesare4Kbitlow-voltageserialElectricallyErasablePROMs(EEPROM).Word-selectabledevicessuchasthe93AA66C,93LC66Cor93C66CaredependentuponexternallogiclevelsdrivingtheORGpintosetwordsize.Fordedicated8-bitco