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IS63LV1024价格

参考价格：￥12.8066

型号：IS63LV1024L-10JLI 品牌：ISSI 备注：这里有IS63LV1024多少钱，2026年最近7天走势，今日出价，今日竞价，IS63LV1024批发/采购报价，IS63LV1024行情走势销售排行榜，IS63LV1024报价。

型号	功能描述	生产厂家企业	LOGO
IS63LV1024	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes Page：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024	High Speed Low Power Asynchronous SRAM	ISSI 矽成半导体	ISSI
IS63LV1024-10J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-10JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-10K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-10KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-10T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-10TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-12TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-15TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024-8TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10B	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10BI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10HI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-10TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12B	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12BI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12H	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-12TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8B	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8BI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8H	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8JI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8T	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024L-8TI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t	ISSI 矽成半导体	ISSI
IS63LV1024_07	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes Page：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-10J	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes Page：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-10J-TR	封装/外壳：32-BSOJ（0.300"，7.62mm 宽）包装：托盘描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS63LV1024-10K	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes Page：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-10KI	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes Page：18 Pages	ISSI 矽成半导体	ISSI

IS63LV1024产品属性

类型
描述
型号
IS63LV1024
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024供应商更多...

更新时间：2026-1-27 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IS63LV1024L-10HL	ISSI	2016+	TSSOP	4000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市赛尔通科技有限公司	IS63LV1024-12T	ICSI	23+		6000	原装现货特价	询价
深圳市能创芯电子科技有限公司	IS63LV1024L-10TLI	ISSI	23+	TSOP	16800	进口原装现货	询价
深圳市力拓辉电子有限公司	IS63LV1024L-10TLI	ISSI	21+	TSOP44	6000	全新原装鄙视假货	询价
深圳市科恒伟业电子有限公司	IS63LV1024L-10HL	ISSI	2430+	TSOP-32	8540	只做原装正品假一赔十为客户做到零风险!!	询价
芯有半导体（深圳）有限公司	IS63LV1024L-12J	ISSI	2008	SOJ	459	厂家指定一级分销全新原装现货价	询价
深圳市鸿昌盛电子科技有限公司	IS63LV1024L-12B	ISSI	25+		248	公司现货库存	询价
标准国际(香港)有限公司	IS63LV1024-12T	ICSI	25+		3	全新原装!优势库存热卖中!	询价
深圳市宏世佳电子科技有限公司	IS63LV1024-12J	ISSI	2025+	SOJ32	3783	全新原装、公司现货热卖	询价
深圳市欧立现代科技有限公司	IS63LV1024-8T	ISSI	24+	TSOP-32	6812	全新原装现货,欢迎询购!!	询价

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进口代理
2022-8-15
IS63LV1024L-12JL进口原装深圳现货
进口原装，国产代理，海量库存，产品齐全，货源渠道百分百正品
2020-6-19
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1
IS62WV5128BLL-55TLI
IS62WV5128BLL-55TLI，全新原装当天发货或门市自取0755-82732291.
2019-3-18
IS62WV5128BLL-55HLI
IS62WV5128BLL-55HLI，全新原装当天发货或门市自取0755-82732291.
2019-3-18

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IS63WV1024BLL-12TLI

IS64LV51216-12TLA3

IS63LV1024L-12JL进口原装深圳现货

IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T

IS62WV5128BLL-55TLI

IS62WV5128BLL-55HLI

DdatasheetPDF页码索引