IS63LV1024L价格

参考价格:¥12.8066

型号:IS63LV1024L-10JLI 品牌:ISSI 备注:这里有IS63LV1024L多少钱,2025年最近7天走势,今日出价,今日竞价,IS63LV1024L批发/采购报价,IS63LV1024L行情走势销售排行榜,IS63LV1024L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS63LV1024L

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

IS63LV1024L

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

IS63LV1024L

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

封装/外壳:32-TFSOP(0.465",11.80mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

ETC

知名厂家

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

Supports the ATmega2560, ATmega1280 and ATmega640

文件:704.79 Kbytes Page:17 Pages

Atmel

爱特梅尔

STK503 User Guide

文件:704.79 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:133.4 Kbytes Page:10 Pages

ICSI

IS63LV1024L产品属性

  • 类型

    描述

  • 型号

    IS63LV1024L

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

更新时间:2025-11-21 18:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
16+
TSOP
41
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
25+
248
公司现货库存
ISSI
2430+
TSOP-32
8540
只做原装正品假一赔十为客户做到零风险!!
ISSI
23+
32-STSOP-I
73390
专业分销产品!原装正品!价格优势!
ISSI/芯成
24+
TSOP
52500
郑重承诺只做原装进口现货
ISSI
25+
SOP
3200
全新原装、诚信经营、公司现货销售
ISSI
21+
TSOP44
6000
全新原装 鄙视假货
ISSI
24+
NA/
323
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
25+
TSOP
25000
代理渠道假一罚十
ISSI
24+
TSOP
27000
绝对全新原装现货特价销售,欢迎来电查询

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