型号 功能描述 生产厂家 企业 LOGO 操作
IS63LV1024L-8T

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

IS63LV1024L-8T

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

文件:614.95 Kbytes Page:18 Pages

ISSI

矽成半导体

IS63LV1024L-8T产品属性

  • 类型

    描述

  • 型号

    IS63LV1024L-8T

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

更新时间:2025-11-20 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
TSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ISSI
存储器
TSOP32
41990
ISSI存储芯片IS63LV1024L-8TLI即刻询购立享优惠#长期有货
ISSI
原厂封装
9800
原装进口公司现货假一赔百
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
ISSI
25+
TSOP
25000
代理渠道假一罚十
ISSI
25+
TSOP32
3000
全新原装、诚信经营、公司现货销售
ISSI
2223+
TSOP
26800
只做原装正品假一赔十为客户做到零风险
ISSI
22+
TSOP32
9035
原装正品,实单请联系
ISSI
23+
TSOP32
10065
原装正品,有挂有货,假一赔十

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