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IS62W价格

参考价格：￥107.8377

型号：IS62WV102416BLL-25MLI 品牌：ISSI 备注：这里有IS62W多少钱，2025年最近7天走势，今日出价，今日竞价，IS62W批发/采购报价，IS62W行情走势销售排行榜，IS62W报价。

型号	功能描述	生产厂家企业	LOGO
IS62WV102416ALL	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416ALL_V01	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416ALL-35MI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416ALL-35MLI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416ALL-35TI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416ALL-35TLI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416BLL	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416BLL-25MI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416BLL-25MLI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416BLL-25TI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416BLL-25TLI	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS62WV102416EALL	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EALL_V01	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EALL-55BI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EALL-55BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EBLL	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EBLL-45BI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EBLL-45BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416EBLL-55BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd	ISSI 矽成半导体	ISSI
IS62WV102416FALL	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FALL-55BI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FALL-55BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FBLL-45BI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FBLL-45BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FBLL-55BI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416FBLL-55BLI	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state	ISSI 矽成半导体	ISSI
IS62WV102416GALL	1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state	ISSI 矽成半导体	ISSI
IS62WV102416GALL-55TLI	1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state	ISSI 矽成半导体	ISSI
IS62WV102416GBLL	1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state	ISSI 矽成半导体	ISSI
IS62WV102416GBLL-45TLI	1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state	ISSI 矽成半导体	ISSI
IS62WV10248EALL	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EALL_V01	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EALL-55BI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EALL-55BLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EALL-55TI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EALL-55TLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-45BI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-45BLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-45TI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-45TLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-55BI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-55BLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-55TI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EBLL-55TLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Automotive temperature (-40oC to +125oC)  Lead-free availab	ISSI 矽成半导体	ISSI
IS62WV10248EFALL	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55B2I	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55B2LI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55BI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55BLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55T2LI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFALL-55TLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45B2I	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45B2LI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45BI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45BLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45T2LI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248EFBLL-45TLI	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV10248HALL	1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV10248HALL) – 2.2V-3.6V VDD (IS62/65WV10248HBLL) • Three	ISSI 矽成半导体	ISSI

IS62W产品属性

类型
描述
型号
IS62W
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

IS62W供应商更多...

更新时间：2025-12-28 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS62WV102416ALL-35TLI-TR	ISSI(美国芯成)	24+	TSOPI48	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市冠亿通科技有限公司	IS62WV102416ALL-35MLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市纳立科技有限公司	IS62WV102416ALL-35MLI	ISSI	三年内		1983	只做原装正品	询价
艾睿（深圳）半导体有限公司	IS62WV102416ALL-35MLI	ISSI(美国芯成)	2447	miniBGA-48(9x11)	315000	210个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
千层芯半导体(深圳)有限公司	IS62WV102416ALL-35MLI	ISSI	24+	SMD	210	“芯达集团”专营军工百分之百原装进口	询价
深圳市昊创电子有限公司	IS62WV102416ALL-35MLI	ISSI	专业军工	NA	1000	只做原装正品军工级部分订货	询价
深圳市斌腾达科技有限公司	IS62WV102416ALL-35MLI	ISSI, Integrated Silicon Solut	21+	24-TBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市星辰微电科技有限公司	IS62WV102416ALL	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市毅创腾电子科技有限公司	IS62WV102416ALL-35TLI	ISSI	23+	48-TSOPI	9550	专业分销产品!原装正品!价格优势!	询价
深圳市芯为科技有限公司	IS62WV102416ALL-35MI	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

IS62W芯片相关品牌

IS62W规格书下载地址

IS62W参数引脚图相关

IS62W数据表相关新闻

IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1
IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1
IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

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IS62W价格

IS62W产品属性

IS62W供应商更多...

IS62W芯片相关品牌

IS62W规格书下载地址

IS62W参数引脚图相关

IS62W数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引