1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd

TTL compatible interface levels

文件：1.05675 Mbytes Page：15 Pages

PowerSaver™ Lower Power Asynchronous SRAM

1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd

1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd

1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd

封装/外壳：48-VFBGA 包装：卷带（TR） 描述：IC SRAM 16MBIT PARALLEL 48VFBGA 集成电路（IC） 存储器

封装/外壳：48-VFBGA 包装：托盘 描述：IC SRAM 16MBIT PARALLEL 48VFBGA 集成电路（IC） 存储器

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件：187.7 Kbytes Page：17 Pages

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件：187.7 Kbytes Page：17 Pages

Industrial and Automotive temperature support

文件：1.00408 Mbytes Page：15 Pages