IS61WV10248EEBLL-10TLI资料使用说明书现货行情报价-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
IS61WV10248EEBLL-10B2I	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10B2LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10BI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10BLI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10T3LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10T4LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-10TLI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-20TLI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8B2I	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8B2LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8BI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8BLI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8T3LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8T4LI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248EEBLL-8TLI	1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind	ISSI 矽成半导体	ISSI
IS61WV10248ALL	1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS61WV10248BLL	1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS61WV10248EDBLL	1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat	ISSI 矽成半导体	ISSI
IS61WV10248ALL	1M x 8 HIGH-SPEED CMOS STATIC RAM 文件：198.94 Kbytes Page：20 Pages	ISSI 矽成半导体	ISSI
IS61WV10248BLL	1M x 8 HIGH-SPEED CMOS STATIC RAM 文件：198.94 Kbytes Page：20 Pages	ISSI 矽成半导体	ISSI

IS61WV10248EEBLL供应商更多...

更新时间：2025-12-11 11:25:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中联芯电子有限公司	IS61WV10248EEBLL-10TLI	ISSI	24+	TSSOP	9000	只做原装正品有挂有货假一赔十	询价
深圳市科恒伟业电子有限公司	IS61WV10248EEBLL-10TLI	ISSI/芯成	2450+	TSOP44	6885	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市威雅利发展有限公司	IS61WV10248EEBLL-10TLI	ISSI	1924	TSSOP	5400	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市宏世佳电子科技有限公司	IS61WV12816BLL-12TLI	ISSI	2025+	TSOP	3615	全新原厂原装产品、公司现货销售	询价
贸泽芯城（深圳）电子科技有限公司	IS61WV128168BLL-12TLI	ISSI	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市安富世纪电子有限公司	IS61WV10248EEBLL-10TLI	ISSI	23+		7300	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	IS61WV12816BLL-12TLI	ISSI(美国芯成)	2447	TSOPII-44	315000	135个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市冠亿通科技有限公司	IS61WV12816BLL-12TLI-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市毅创腾电子科技有限公司	IS61WV12816BLL-12TLI	ISSI	23+	44-TSOPII	9550	专业分销产品!原装正品!价格优势!	询价
讯运(深圳/上海)电子有限公司	IS61WV12816BLL-12TLI-TR	ISSI(美国芯成)	2021+	TSOPII-44	499		询价

IS61WV10248EEBLL芯片相关品牌

IS61WV10248EEBLL规格书下载地址

IS61WV10248EEBLL参数引脚图相关

IS61WV10248EEBLL数据表相关新闻

IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1
IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

IS61WV10248EEBLL供应商更多...

IS61WV10248EEBLL芯片相关品牌

IS61WV10248EEBLL规格书下载地址

IS61WV10248EEBLL参数引脚图相关

IS61WV10248EEBLL数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引