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IS61C256价格

参考价格:¥23.8669

型号:IS61C25616AL-10KLI 品牌:ISSI 备注:这里有IS61C256多少钱,2026年最近7天走势,今日出价,今日竞价,IS61C256批发/采购报价,IS61C256行情走势销售排行榜,IS61C256报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61C256

WRITE CYCLE SWITCHING CHARACTERISTICS

文件:319.55 Kbytes Page:6 Pages

ISSI

矽成半导体

IS61C256

WRITE CYCLE SWITCHING CHARACTERISTICS

ISSI

矽成半导体

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

5V High-Speed Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44SOJ 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:98.15 Kbytes Page:12 Pages

ISSI

矽成半导体

IS61C256产品属性

  • 类型

    描述

  • 型号

    IS61C256

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    WRITE CYCLE SWITCHING CHARACTERISTICS

更新时间:2026-8-1 17:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
TSOP
8500
ISSI/芯成
20+
明嘉莱只做原装正品现货
2510000
TSOP
ISSI
2025+
TSOP
4950
原装进口价格优 请找坤融电子!
ISSI, Integrated Silicon Solut
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
25+
1060
全新原装!优势库存热卖中!
ISSI/芯成
23+
SOJ28
4500
只做原装正品现货或订货假一赔十!
ISSI
24+
PLCC
6820
全新原装现货,量大特价,原厂正规渠道!
ISSI
26+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
ICSI
19+
SOJ
47500
25+
2500
公司现货库存

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