IS61C256价格

参考价格:¥23.8669

型号:IS61C25616AL-10KLI 品牌:ISSI 备注:这里有IS61C256多少钱,2026年最近7天走势,今日出价,今日竞价,IS61C256批发/采购报价,IS61C256行情走势销售排行榜,IS61C256报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61C256

WRITE CYCLE SWITCHING CHARACTERISTICS

文件:319.55 Kbytes Page:6 Pages

ISSI

矽成半导体

IS61C256

WRITE CYCLE SWITCHING CHARACTERISTICS

ISSI

矽成半导体

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available

ISSI

矽成半导体

5V High-Speed Asynchronous SRAM

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44SOJ 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:60.99 Kbytes Page:8 Pages

ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

文件:98.15 Kbytes Page:12 Pages

ISSI

矽成半导体

IS61C256产品属性

  • 类型

    描述

  • 型号

    IS61C256

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    WRITE CYCLE SWITCHING CHARACTERISTICS

更新时间:2026-3-3 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2025+
TSOP
4950
原装进口价格优 请找坤融电子!
ISSI, Integrated Silicon Solut
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ISSI
26+
SOJ
76200
全新原装进口现货,,本公司承诺原装正品假一赔百
ISSI
2025+
TSOP
3783
全新原装、公司现货热卖
ISSI
2023+
TSOP-28
53500
正品,原装现货
ISSI
24+
SOJ
8000
只做原装正品现货
ISSI
9914
SOJ-28
2200
全新原装绝对自己公司现货
ISSI
25+
SOJ
25000
代理渠道假一罚十
ISSI
24+
TSOP-28
8100
绝对原装现货,价格低,欢迎询购!
ICSI
19+
SOJ
47500

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