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IS61C256AH-12NI

32K x 8 HIGH-SPEED CMOS STATIC RAM

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ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

IS61C256AH-12NI产品属性

  • 类型

    描述

  • 型号

    IS61C256AH-12NI

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    32K x 8 HIGH-SPEED CMOS STATIC RAM

更新时间:2026-3-5 10:19:00
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