128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

DDR3 SDRAM w/ ECC

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

动态随机存储器(DRAM)

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages