IS46TR16640C规格书应用电路全球贸易商ISSI-IC资料网

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型号	功能描述	生产厂家企业	LOGO
IS46TR16640C	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C	1.5V DDR3 SDRAM Automotive	ISSI 矽成半导体	ISSI
IS46TR16640C-107MBLA1	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C-107MBLA2	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C-125JBLA1	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C-125JBLA2	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C-125JBLA25	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-093NBLA3	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-107MBLA1	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-107MBLA2	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-107MBLA3	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-125JB2LA2	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-125JBLA1	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-125JBLA2	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640CL-125JBLA25	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture	ISSI 矽成半导体	ISSI
IS46TR16640C-125JBLA1-TR	封装/外壳：96-TFBGA 包装：托盘描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS46TR16640C-125JBLA2	封装/外壳：96-TFBGA 包装：托盘描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS46TR16640CL	1.35V DDR3L SDRAM Automotive	ISSI 矽成半导体	ISSI
IS46TR16640ED	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable	ISSI 矽成半导体	ISSI
IS46TR16640B	Programmable CAS Latency 文件：3.89952 Mbytes Page：88 Pages	ISSI 矽成半导体	ISSI
IS46TR16640BL	Programmable CAS Latency 文件：3.89952 Mbytes Page：88 Pages	ISSI 矽成半导体	ISSI

IS46TR16640C供应商更多...

更新时间：2025-12-28 16:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市冠亿通科技有限公司	IS46TR16640CL-107MBLA1-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市向鸿伟业电子有限公司	IS46TR16640CL-125JBLA1	ISSI/芯成	2407+	BGA	7750	原装现货!实单直说!特价!	询价
深圳市中联芯电子有限公司	IS46TR16640C-125JBLA25	ISSI	24+	BGA	9000	只做原装正品有挂有货假一赔十	询价
深圳市诺美思科技有限公司	IS46TR16640CL-125JBLA25-TR	ISSI, Integrated Silicon Solut	2年内批号	96-TWBGA(9x13)	4800	只供原装进口公司现货+可订货	询价
深圳深宇韬电子科技有限公司	IS46TR16640CL-107MBLA2	ISSI/矽成	21+	SOP	7000	正品渠道现货,终端可提供BOM表配单。	询价
深圳市星辰微电科技有限公司	IS46TR16640CL	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市芯为科技有限公司	IS46TR16640CL-107MBLA2	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市安罗世纪电子有限公司	IS46TR16640C-125JBLA25-TR	ISSI	2023+	96TWBGA	4707	安罗世纪电子只做原装正品货	询价
深圳和润天下电子科技有限公司	IS46TR16640CL-125JBLA25	ISSI	22+	FBGA	1323		询价
广州市睿科电子科技有限公司	IS46TR16640CL-125JBLA1	ISSI	21+		190	只做原装,供应终端,库存和价格请咨询为准	询价

IS46TR16640C芯片相关品牌

IS46TR16640C规格书下载地址

IS46TR16640C参数引脚图相关

IS46TR16640C数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS46LR32160B-6BLA1
IS46LR32160B-6BLA1
2021-6-2
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9

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IS46TR16640C供应商更多...

IS46TR16640C芯片相关品牌

IS46TR16640C规格书下载地址

IS46TR16640C参数引脚图相关

IS46TR16640C数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS46LR32160B-6BLA1

IS46TR16256AL-125KBLA2

IS46TR16128CL-125KBLA1

DdatasheetPDF页码索引