1.35V DDR3L SDRAM

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 8GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 8GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

1Gx8, 512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

Programmable CAS Latency

文件：2.99708 Mbytes Page：80 Pages

Programmable CAS Latency

文件：2.99708 Mbytes Page：80 Pages