型号 功能描述 生产厂家 企业 LOGO 操作
IS43DR81280

1Gb (x8, x16) DDR2 SDRAM

文件:863.44 Kbytes Page:28 Pages

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

文件:855.01 Kbytes Page:28 Pages

ISSI

矽成半导体

1.8V DDR2 SDRAM

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

文件:549.15 Kbytes Page:28 Pages

ISSI

矽成半导体

封装/外壳:60-TFBGA 包装:托盘 描述:IC DRAM 1GBIT PARALLEL 60TWBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:60-TFBGA 包装:卷带(TR) 描述:IC DRAM 1GBIT PARALLEL 60TWBGA 集成电路(IC) 存储器

ETC

知名厂家

1.8V DDR2 SDRAM

ISSI

矽成半导体

Differential data strobe

文件:1.5625 Mbytes Page:49 Pages

ISSI

矽成半导体

更新时间:2026-1-4 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
FBGA
47186
郑重承诺只做原装进口现货
ISSI, Integrated Silicon Solut
21+
BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI/矽成
21+
SOP
7000
正品渠道现货,终端可提供BOM表配单。
ISSI
24+
NA
56457
ISSI
24+
NA/
14079
原装现货,当天可交货,原型号开票
ISSI(美国芯成)
24+
TWBGA60(8x10.5)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ISSI
2023+
BGA60
1197
原厂全新正品旗舰店优势现货
ISSI/芯成
2025+
BGA60
800
原装进口价格优 请找坤融电子!
ISSI
23+
60-TWBGA(8x13.65)
9550
专业分销产品!原装正品!价格优势!
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

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