4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

EDO & Fast Page Mode DRAM

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

4Mx4 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word