位置：首页 > IC中文资料第9544页 > IS41LV44002B-50TI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV44002B-50TI | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 |   | |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 | | ||
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 | | ||
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 | | ||
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 | | ||
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. | ISSI 矽成半导体 | |
IS41LV44002B-50TI产品属性
- 类型
描述
- 型号
IS41LV44002B-50TI
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
4M x 4(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
SOJ |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ISSI |
24+ |
TQFP |
9630 |
我们只做原装正品现货!量大价优! |
|||
ISS |
23+ |
65480 |
|||||
ISSI |
25+ |
TSOP2(2426) |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI |
0342+ |
SOJ24 |
14992 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
0343+ |
SOJ |
278 |
原装现货海量库存欢迎咨询 |
|||
ISSI/矽成 |
1126 |
DRAM/4MX4EDO/TSOP/50NS/L |
77 |
原装香港现货真实库存。低价 |
|||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SI |
24+ |
NA/ |
103 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
24+ |
SOJ24 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
IS41LV44002B-50TI芯片相关品牌
IS41LV44002B-50TI规格书下载地址
IS41LV44002B-50TI参数引脚图相关
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- IS41LV44002C-50CTGI-TR
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- IS41LV44002B-50T
- IS41LV44002B-50JLI
- IS41LV44002B-50JL
- IS41LV44002B-50JI
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- IS41LV44002AS(L)
- IS41LV44002A
- IS41LV44002-60TI
- IS41LV44002-60T
- IS41LV44002-60JI
- IS41LV44002-60J
- IS41LV44002-50TI
- IS41LV44002-50T
- IS41LV44002-50JI
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- IS41LV4100-60JI
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IS41LV44002B-50TI数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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