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位置：首页 > IC中文资料第5702页 > IS41LV44002

型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV44002

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41LV44002

4Mx4 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ICSI

IS41LV44002-50J

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41LV44002-50JI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41LV44002-60J

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41LV44002-60JI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41LV44002A

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word

ICSI

IS41LV44002B

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50J

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50JI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50JL

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50JLI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50T

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50TI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50TL

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B-50TLI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

ISSI

矽成半导体

IS41LV44002B

EDO & Fast Page Mode DRAM

ISSI

矽成半导体

IC41LV44002A

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word

ICSI

IS41LV44002产品属性

  • 类型

    描述

  • 型号

    IS41LV44002

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    4M x 4(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV44002供应商更多...

更新时间：2026-1-3 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
IS41LV44002B-50JL
ISSI
25+23+
SOJ
47109
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市胜彬电子有限公司
IS41LV44002B-50JL
ISSI
22+
SOJ
8000
原装正品支持实单
询价
深圳市一线半导体有限公司
IS41LV6256-35T
24+
TSSOP
10
询价
标准国际(香港)有限公司
IS41LV6100-60K
ISSI
25+
4
公司优势库存 热卖中!!
询价
深圳市赛美科科技有限公司
IS41LV85125-60K
ISSI
SOJ
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市纳立科技有限公司
IS41LV44002C-50CTGI
ISSI
三年内
1983
只做原装正品
询价
艾睿（深圳）半导体有限公司
IS41LV44002A-60JL
ISSI
2447
SOJ24
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
IS41LV44002A-60JL
ISSI
23+
SOJ24
8000
只做原装现货
询价
天津市博通航睿技术有限公司
IS41LV44002A-60JL
ISSI
23+
SOJ24
7000
询价
深圳市创新迹电子有限公司
IS41LV44052-60J
ISSI
22+
SOJ24
20000
公司只做原装 品质保障
询价

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