HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES • Marked as FPT1. • Current Transfer Ratio MIN. 50 • Isolation Voltage (3.75kVRMS,5.3kVPK) • All

IS181 Transistor Output, 4 pin, SMD Optocoupler

IS181D - 光电耦合器, Transistor Output, 1通道, SOP, 4 引脚, 50 mA, 3.75 kV, 300 %

The IS181D is a 1-channel 4-pin high density mounting Optically Coupled Isolator consisting of an infrared light emitting diode and NPN silicon phototransistor. It is suitable for industrial systems controllers, signal transmission between systems of different potentials and impedances. ·All electrical parameters 100% tested\n·50mA Forward current\n·6V Reverse voltage\n·170mW Total power dissipation;

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES • Marked as FPT1. • Current Transfer Ratio MIN. 50 • Isolation Voltage (3.75kVRMS,5.3kVPK) • All

封装/外壳：4-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：OPTOISO 3.75KV TRANS MINI-FLAT 隔离器 光隔离器 - 晶体管，光电输出

封装/外壳：4-SMD，鸥翼 包装：管件 描述：OPTOISO 3.75KV TRANS MINI-FLAT 隔离器 光隔离器 - 晶体管，光电输出

晶体管光耦

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182