IRLZ24价格

参考价格:¥4.7516

型号:IRLZ24LPBF 品牌:Vishay 备注:这里有IRLZ24多少钱,2025年最近7天走势,今日出价,今日竞价,IRLZ24批发/采购报价,IRLZ24行情走势销售排行榜,IRLZ24报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLZ24

HEXFET POWER MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

IRLZ24

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design,  low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissip

VishayVishay Siliconix

威世威世科技公司

IRLZ24

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

IRLZ24

Power MOSFET

文件:1.74995 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ24

Power MOSFET

文件:1.74995 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ24

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRLZ24

HEXFET POWER MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design,  low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissip

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.74995 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件:280.77 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:314.12 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:245.79 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:314.12 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:245.79 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel MOSFET Transistor

文件:338.62 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:202.79 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:771.59 Kbytes Page:9 Pages

IRF

N-Channel 60 V (D-S) MOSFET

文件:1.35702 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Logic-Level Gate Drive, Advanced Process Technology

文件:771.59 Kbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:771.59 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:202.79 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:202.79 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:306.89 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:306.89 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:202.79 Kbytes Page:11 Pages

IRF

Power MOSFET

文件:1.74995 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件:176.8 Kbytes Page:6 Pages

IRF

Power MOSFET

文件:314.12 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:245.79 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:245.79 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件:176.8 Kbytes Page:6 Pages

IRF

IRLZ24产品属性

  • 类型

    描述

  • 型号

    IRLZ24

  • 功能描述

    MOSFET N-Chan 60V 17 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-18 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR/VISHAY
25+
TO-220
45000
IR/VISHAY全新现货IRLZ24N即刻询购立享优惠#长期有排单订
IR
22+
TO-220
26550
原装正品,实单请联系
IR/INFINEON
24+
TO-220
5715
只做原装 有挂有货 假一罚十
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
IR
23+/24+
TO-220AB
9865
原包原标签100%进口原装可开13%税
VISHAY(威世)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
IR(国际整流器)
24+
N/A
8748
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON
25+
TO-220
12000
原装正品!!!优势库存!0755-83210901

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