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IRLZ24N价格
参考价格：￥1.7163
型号：IRLZ24NPBF 品牌：INTERNATIONAL 备注：这里有IRLZ24N多少钱，2025年最近7天走势，今日出价，今日竞价，IRLZ24N批发/采购报价，IRLZ24N行情走势销售排行榜，IRLZ24N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ24N | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRLZ24N | N-Channel MOSFET Transistor 文件：338.62 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRLZ24N | 采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology 文件：202.79 Kbytes Page：11 Pages | IRF | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：771.59 Kbytes Page：9 Pages | IRF | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.35702 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Logic-Level Gate Drive, Advanced Process Technology 文件：771.59 Kbytes Page：9 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：771.59 Kbytes Page：9 Pages | IRF | | ||
Advanced Process Technology 文件：202.79 Kbytes Page：11 Pages | IRF | | ||
N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：202.79 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：306.89 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：306.89 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：202.79 Kbytes Page：11 Pages | IRF | |
IRLZ24N产品属性
- 类型
描述
- 型号
IRLZ24N
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB
- 制造商
International Rectifier
- 功能描述
MOSFET N LOGIC TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRLZ24N即刻询购立享优惠#长期有排单订 |
|||
INFINEON |
25+ |
TO-220 |
12000 |
原装正品!!!优势库存!0755-83210901 |
|||
IR/INFINEON |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
22+ |
TO-220 |
26550 |
原装正品，实单请联系 |
|||
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR(国际整流器) |
24+ |
N/A |
8748 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
IRLZ24N规格书下载地址
IRLZ24N参数引脚图相关
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2020-7-16
DdatasheetPDF页码索引
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