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型号 功能描述 生产厂家 企业 LOGO 操作
IRLU014N

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRLU014N

HEXFET Power MOSFET

INFINEON

英飞凌

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

Logic-Level Gate Drive

文件:293.41 Kbytes Page:10 Pages

IRF

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FAIRCHILD

仙童半导体

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

STMICROELECTRONICS

意法半导体

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

ASI

Adaptive Cable Equalizer for High-Speed Data Recovery

文件:521.28 Kbytes Page:18 Pages

NSC

国半

IRLU014N产品属性

  • 类型

    描述

  • 型号

    IRLU014N

  • 功能描述

    MOSFET N-CH 55V 10A I-PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-8-1 9:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO-263
69820
终端可以免费供样,支持BOM配单!
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
International Rectifier
2022+
1848
全新原装 货期两周
IR
24+
TO-251
4500
只做原装正品现货 欢迎来电查询15919825718
VBsemi/台湾微碧
22+
TO-251
20000
公司只做原装 品质保障
Infineon Technologies
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VBsemi
25+
TO251
9000
只做原装正品 有挂有货 假一赔十
IR
23+
TO-251
37200
##公司主营品牌长期供应100%原装现货可含税提供技术
Infineon Technologies
23+
原装
7000

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