5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

Power MOSFET

文件：463.68 Kbytes Page：11 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤65mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Logic-Level Gate Drive

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Logic-Level Gate Drive

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：397.91 Kbytes Page：2 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Logic-Level Gate Drive

文件：313.98 Kbytes Page：11 Pages

Logic-Level Gate Drive

文件：313.98 Kbytes Page：11 Pages

Logic-Level Gate Drive

文件：313.98 Kbytes Page：11 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.043609 Mbytes Page：8 Pages

Advanced Process Technology

文件：313.98 Kbytes Page：11 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

HEXFET POWER MOSFET

文件：745.11 Kbytes Page：10 Pages

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

HEXFET POWER MOSFET

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：463.68 Kbytes Page：11 Pages

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

Power MOSFET

文件：1.2042 Mbytes Page：10 Pages

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

Power MOSFET

文件：472.42 Kbytes Page：13 Pages

PISTON SEALS

DESCRIPTION The BECA 024 profile is a double acting composite piston seal composed of a profiled rubber ring and a filled PTFE or POM back-up ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine systems Landing gear

Low Power, 5 MBd Digital CMOS Optocoupler

Description ACPL-M21L (single channel SO-5 package), ACPL-021L (single channel SO-8 package) and ACPL-024L (dual channel SO-8 package) are optically-coupled logic gates. The detector IC has CMOS output stage and optical receiver input stage with built-in Schmitt trigger to provide logic-compatibl

PC board mounting and direct insert mounting available

文件：1.60394 Mbytes Page：3 Pages

Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages

Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages