Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

55V N-Channel MOSFET

Benefits VDS (V) =55V ID =2.0A (VGS = 10V) RDS(ON)

Power MOSFET

HEXFET® Power MOSFET

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

55V N-Channel MOSFET

Benefits VDS (V) =55V ID =2.0A (VGS = 10V) RDS(ON)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

‘N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：262.4 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：262.4 Kbytes Page：9 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.80269 Mbytes Page：8 Pages

HEXFET Power MOSFET

文件：214.35 Kbytes Page：8 Pages

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

Power MOSFET

文件：174.34 Kbytes Page：9 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.05605 Mbytes Page：8 Pages

Power MOSFET

文件：170.07 Kbytes Page：8 Pages

Power MOSFET

文件：170.07 Kbytes Page：8 Pages

STATIC SEALS

DESCRIPTION The BECA 014 profile is a polyurethane static seal. It provides an alternative solution to combining an O'Ring (possible twisting during fitting) with a back-up ring (positioning is not always optimal). APPLICATIONS Mobile hydraulics Injection presses Presses Standard cy

3-Cup Anemometer

Benefits and Features Ideal for applications that do not require wind direction measurements Sealed magnetic reed switch Designed for continuous, long term, unattended operation in adverse conditions Standard aluminum cup assembly has a distance constant of less than 4.5 m For greater se

Field replaceable bearings and electronics

文件：899.27 Kbytes Page：1 Pages

Aluminum or Lexan cups available

文件：374.14 Kbytes Page：2 Pages

EFD20 HIGH FREQUENCY PoE TRANSFORMER

文件：280.38 Kbytes Page：1 Pages