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IRLL014NTR中文资料
IRLL014NTR数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
IRLL014NTR产品属性
- 类型
描述
- 型号
IRLL014NTR
- 功能描述
MOSFET N-CH 55V 2A SOT223
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
SOT-223 |
38000 |
||||
INFINEON/英飞凌 |
20+ |
SOT-223 |
16300 |
终端可免费提供样品,欢迎咨询 |
|||
INFINEON |
23+ |
SOT-223 |
24837 |
正规渠道,只有原装! |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
IR |
25+ |
SOT-223 |
35715 |
IR全新特价IRLL014NTRPBF即刻询购立享优惠#长期有货 |
|||
IR |
16+ |
SOT-223 |
36000 |
原装正品,优势库存81 |
|||
IR |
24+ |
SOT223 |
98000 |
一级代理/全新原装现货/长期供应! |
|||
INFINEON |
20+ |
SOT-223 |
50000 |
||||
IR |
25+23+ |
SOT223 |
13397 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2021+ |
SOT-223 |
9450 |
原装现货。 |
IRLL014NTRPBF-CUTTAPE 价格
参考价格：￥1.1644
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