IRL620价格

参考价格:¥5.1881

型号:IRL620PBF 品牌:VISHAY 备注:这里有IRL620多少钱,2024年最近7天走势,今日出价,今日竞价,IRL620批发/采购报价,IRL620行情走势销售排行榜,IRL620报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRL620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80Ω ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技

Vishay
IRL620

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技

Vishay
IRL620

PowerMOSFET

文件:2.20214 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRL620

PowerMOSFET

文件:2.20053 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技

Vishay

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8Ω ID=5A FEATURES ♦Logic-LevelGateDrive ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.609Ω

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

HEXFETPOWERMOSFET

VDSS=200V RDS(on)=0.80Ω ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80Ω ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logiclevelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logiclevelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logiclevelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

VDSS=200V RDS(on)=0.80Ω ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logiclevelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:2.20214 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

文件:280.22 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:2.20053 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

SurfaceMount

文件:1.47104 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

DCaxialfans

文件:375.69 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:505.68 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

LowProfile

文件:146.94 Kbytes Page:2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

DCaxialfans

文件:430.87 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

SuperSOT??80VNPNSILICONLOWSATURATIONTRANSISTOR

文件:240.96 Kbytes Page:6 Pages

Zetex

Zetex Semiconductors

Zetex

IRL620产品属性

  • 类型

    描述

  • 型号

    IRL620

  • 功能描述

    MOSFET N-Chan 200V 5.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA
20000
全新原装假一赔十
VISHAY/威世
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VISHAY(威世)
23+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
Vishay Siliconix
23+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
VISHAY/威世
23+
NA/
3623
原装现货,当天可交货,原型号开票
IR
07+
TO-263
13980
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY(威世)
23+
TO220AB
6000
IR
1822+
TO263
9852
只做原装正品假一赔十为客户做到零风险!!
INFINEON/英飞凌
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
Vishay
21+
N/A
50
深圳通

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