Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

Power MOSFET

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Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.8Ω ID = 5 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

HEXFET POWER MOSFET

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

Power MOSFET

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isc N-Channel MOSFET Transistor

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Power MOSFET

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Surface Mount

文件：1.47104 Mbytes Page：10 Pages

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

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ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages