VDS (V) 200

RDS(on) (Ω) VGS = 5.0 V 0.80

Qg (Max.) (nC) 16

Qgs (nC) 2.7

Qgd (nC) 9.6

Configuration Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• RDS(on) Specified at VGS = 4 V and 5 V

• Fast Switching

• Ease of paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available