位置：首页 > IC中文资料第6570页 > IRGS30B60
IRGS30B60价格
参考价格：￥13.4615
型号：IRGS30B60KPBF 品牌：IR 备注：这里有IRGS30B60多少钱，2026年最近7天走势，今日出价，今日竞价，IRGS30B60批发/采购报价，IRGS30B60行情走势销售排行榜，IRGS30B60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS30B60 | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF |   | |
IRGS30B60 | INSULATED GATE BIPOLAR TRANSISTOR | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：385.77 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：385.77 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-247AD Package Benefits • Benchmark Efficiency for Motor Control | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | |
IRGS30B60产品属性
- 类型
描述
- 型号
IRGS30B60
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-263 |
200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
26+ |
TO-263 |
12000 |
原装，正品 |
|||
IR |
23+ |
TO-263 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IR |
22+ |
TO-263 |
87203 |
||||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
INFINEON/英飞凌 |
2447 |
TO-263-3(D2PAK) |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRGS30B60芯片相关品牌
IRGS30B60规格书下载地址
IRGS30B60参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH9150
- IRH9130
- IRH8450
- IRH8250
- IRH8230
- IRH8150
- IRH8054
- IRH7450
- IRH7250
- IRH7230
- IRH7150
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGS6B60KTRLPBF
- IRGS6B60KPBF
- IRGS6B60KDTRLP
- IRGS6B60KDPBF
- IRGS4B60KD1TRLP
- IRGS4B60KD1PBF
- IRGS4715DPBF
- IRGS4630DPBF
- IRGS4620DPBF
- IRGS4615DPBF
- IRGS4610DPBF
- IRGS4607DPBF
- IRGS4086PBF
- IRGS4064DPBF
- IRGS4062DPBF
- IRGS4056DPBF
- IRGS4045DTRLPBF
- IRGS4045DPBF
- IRGS30B60KTRRP
- IRGS30B60KPBF
- IRGS15B60KPBF
- IRGS15B60KDTRRP
- IRGS14C40LTRLP
- IRGS14C40LPBF
- IRGS10B60KDTRLP
- IRGS10B60KDPBF
- IRGR4610DPBF
- IRGR4607DPBF
- IRGR4045DPBF
- IRGR3B60KD2TRP
- IRGR3B60KD2TRLP
- IRGR3B60KD2PBF
- IRGPS66160DPBF
- IRGPS60B120KDP
- IRGPS46160DPBF
- IRGPS40B120UPBF
- IRGPS40B120UDP
- IRGPS4067DPBF
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC56
- IRGPC40
- IRGPC20U
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
IRGS30B60数据表相关新闻
IRL1404ZPBF 大功率 MOS 管 DC-DC 转换器、电机驱动、逆变器、电池保护、开关电源、电动工具、大功率负载开关
IRL1404ZPBF 是英飞凌 / IR 推出的 N 沟道增强型功率 MOSFET，采用逻辑电平驱动，适合低压大电流开关应用，为工业级标准器件。
2026-4-16IRGP4266D-EPBF
IRGP4266D-EPBF
2023-12-11IRG4PC50WPBF
属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12IRL1004STRRPBF公司大量原装正品现货/长期供应
IRL1004STRRPBF公司大量原装正品现货/长期供应
2019-5-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
