IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Appliance Drives · Uninterruptible power supplies (UPS) · Inverters

600V Low VCEon Copack IGBT in a D-Pak package

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：408.73 Kbytes Page：15 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：IGBT 600V 16A 77W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：408.73 Kbytes Page：15 Pages

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：408.73 Kbytes Page：15 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 16A 77W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：408.73 Kbytes Page：15 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Networks

Material # 4610M-LF Series Product Line Networks

Networks

文件：61.83 Kbytes Page：1 Pages

Varnished Chokes

文件：108.28 Kbytes Page：1 Pages

High Q, high self-resonant frequency

文件：108.28 Kbytes Page：1 Pages