INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT FAST 1200V 45A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages