INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

Phase Control SCR 680 Amperes Avg 500-1300 Volts

Phase Control SCR 680 Amperes Avg 500-1300 Volts

General Purpose 100MHz Op Amp with Disable

文件：1.11841 Mbytes Page：8 Pages

General Purpose 100MHz Op Amp with Disable

文件：1.11841 Mbytes Page：8 Pages

General Purpose 100MHz Op Amp with Disable

文件：1.11841 Mbytes Page：8 Pages