INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • Hig

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 20A 43W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

180-MHz HIGH-SPEED AMPLIFIERS

文件：326.67 Kbytes Page：22 Pages

180-MHz HIGH-SPEED AMPLIFIERS

文件：326.67 Kbytes Page：22 Pages

180-MHz HIGH-SPEED AMPLIFIERS

文件：326.67 Kbytes Page：22 Pages

180-MHz HIGH-SPEED AMPLIFIERS

文件：326.67 Kbytes Page：22 Pages