INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE

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封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11A 33W TO220ABFP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Paralle

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Paralle

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Paralle

General Purpose Rectifier

Features: □ Standard and Reverse Polarities with Color Coded Seals □ High Surge Current Ratings □ Electrical Selection for Parallel and Series Operation Applications □ Welders □ Battery Chargers □ Electrochemical Refining □ Metal Reduction □ General Industrial High Current Rectification

Rectifier diodes Schottky barrier

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