SCHOTTKY RECTIFIER 40 Amp

Description/ Features The MBR4045WTPbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power suppl

Schottky Rectifier, 2 x 20 A

DESCRIPTION The MBR4045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converte

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Paralle

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 45 VOLTS Features and Benefits •Low Forward Voltage •Low Power Loss/High Efficiency •High Surge Capacity •175°C Operating Junction Temperature •40 A Total (20 A Per Diode Leg) •Pb−Free Package is Available* Applications •Power S

40 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

MBR4045WT SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

SCHOTTKY RECTIFIER

文件：249.83 Kbytes Page：6 Pages

Schottky Barrier Rectifier

文件：248.92 Kbytes Page：2 Pages

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247AC 分立半导体产品 二极管 - 整流器 - 阵列

40A SCHOTTKY RECTIFIER

文件：142.93 Kbytes Page：2 Pages

SWITCHMODE??Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 45 VOLTS Features and Benefits •Low Forward Voltage •Low Power Loss/High Efficiency •High Surge Capacity •175°C Operating Junction Temperature •40 A Total (20 A Per Diode Leg) •Pb−Free Package is Available* Applications •Power S

Switch Mode Power Rectifier

SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 45 VOLTS Features and Benefits •Low Forward Voltage •Low Power Loss/High Efficiency •High Surge Capacity •175°C Operating Junction Temperature •40 A Total (20 A Per Diode Leg) •Pb−Free Package is Available* Applications •Power S

SCHOTTKY RECTIFIER 40 Amp

Description/ Features The MBR4045WTPbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power suppl

Schottky Rectifier, 2 x 20 A

DESCRIPTION The VS-MBR4045WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies,

Schottky Rectifier, 2 x 20 A

文件：162.84 Kbytes Page：7 Pages

Schottky Rectifier, 2 x 20 A

文件：162.84 Kbytes Page：7 Pages

Schottky Rectifier, 2 x 20 A

文件：162.84 Kbytes Page：7 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

800 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER

文件：179.68 Kbytes Page：2 Pages

STM32F3 series in-application programming

文件：391.96 Kbytes Page：16 Pages