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IRG4PC50FD-E价格
参考价格：￥27.8063
型号：IRG4PC50FD-EPBF 品牌：International 备注：这里有IRG4PC50FD-E多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PC50FD-E批发/采购报价，IRG4PC50FD-E行情走势销售排行榜，IRG4PC50FD-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：763.7 Kbytes Page：11 Pages | IRF |   | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design | IRF | |
IRG4PC50FD-E产品属性
- 类型
描述
- 型号
IRG4PC50FD-E
- 功能描述
IGBT 晶体管 600V FAST 1-8 KHZ COPACK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247 |
20000 |
原装正品现货 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
Infineon Technologies |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
21+ |
TO-247 |
6880 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
2022+ |
TO-247AC |
8000 |
只做原装支持实单,有单必成。 |
|||
INFINEON/英飞凌 |
2023+ |
TO-247 |
8635 |
全新原装正品,优势价格 |
|||
IR |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
INFINEON/英飞凌 |
2447 |
TO-247AC |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
IRG4PC50FD-E规格书下载地址
IRG4PC50FD-E参数引脚图相关
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- jumper
- jtag接口
- jk触发器
- j111
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- isd1420
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- IRGPH50
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- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4PH30KPBF
- IRG4PH30KDPBF
- IRG4PH20KPBF
- IRG4PH20KDPBF
- IRG4PF50WPBF
- IRG4PF50WDPBF
- IRG4PC60UPBF
- IRG4PC60FPBF
- IRG4PC50WPBF
- IRG4PC50UPBF
- IRG4PC50UDPBF
- IRG4PC50UD-EPBF
- IRG4PC50SPBF
- IRG4PC50SDPBF
- IRG4PC50KPBF
- IRG4PC50KDPBF
- IRG4PC50FPBF
- IRG4PC50F-EPBF
- IRG4PC50FDPBF
- IRG4PC50FD-EPBF
- IRG4PC40WPBF
- IRG4PC40UPBF
- IRG4PC40UDPBF
- IRG4PC40UD-EPBF
- IRG4PC40SPBF
- IRG4PC40KPBF
- IRG4PC40FPBF
- IRG4PC40FDPBF
- IRG4PC30WPBF
- IRG4PC30UDPBF
- IRG4PC30SPBF
- IRG4PC30KPBF
- IRG4PC30KDPBF
- IRG4PC30FPBF
- IRG4PC30FDPBF
- IRG4IBC30WPBF
- IRG4IBC30UDPBF
- IRG4IBC30SPBF
- IRG4IBC30KDPBF
- IRG4IBC20WPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PC50FD-E数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17
DdatasheetPDF页码索引
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