IRFZ44Z价格

参考价格:¥5.4428

型号:IRFZ44ZLPBF 品牌:International 备注:这里有IRFZ44Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRFZ44Z批发/采购报价,IRFZ44Z行情走势销售排行榜,IRFZ44Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ44Z

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRFZ44Z

N-Channel MOSFET Transistor

文件:338.91 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

ADVANCED PROCESS TECHNOLOGY

文件:387.96 Kbytes Page:12 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:387.96 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:299.81 Kbytes Page:2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件:387.96 Kbytes Page:12 Pages

IRF

IRFZ44Z产品属性

  • 类型

    描述

  • 型号

    IRFZ44Z

  • 功能描述

    MOSFET N-CH 55V 51A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-6 23:00:00
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