N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.22 Kbytes Page：2 Pages

Simple Drive Requirements

文件：161.14 Kbytes Page：7 Pages

MOSFETs and JFETs

Simple Drive Requirements

POWER MOSFET

Part Number RDS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-s

POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)

Part Number RDS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-s

Simple Drive Requirements

文件：161.14 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.59 Kbytes Page：2 Pages

MOSFETs and JFETs

Simple Drive Requirements

文件：161.43 Kbytes Page：7 Pages

Simple Drive Requirements

文件：161.43 Kbytes Page：7 Pages

N-Channel MOSFET in a Hermetically sealed

文件：15.59 Kbytes Page：1 Pages

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

文件：21.98 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：21.39 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：22.51 Kbytes Page：2 Pages