REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

Simple Drive Requirements

DESCRIPTION • Drain Current ID=44A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) • Simple Drive Requirements APPLICATIONS • Switching power supplies • Motor controls,Inverters and Choppers • Audio amplifiers and high en

Repetitive Avalanche Ratings

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N-CHANNEL POWER MOSFET

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Repetitive Avalanche Ratings

Repetitive Avalanche Ratings

文件：147.69 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

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Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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