POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)

Part Number RDS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-s

POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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