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IRFU9024N价格
参考价格:¥1.5143
型号:IRFU9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFU9024N多少钱,2025年最近7天走势,今日出价,今日竞价,IRFU9024N批发/采购报价,IRFU9024N行情走势销售排行榜,IRFU9024N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9024N | 60V P-Channel Enhancement Mode MOSFET General Features RDS(ON) | EVVOSEMI 翊欧 | ||
IRFU9024N | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) 文件:117.92 Kbytes Page:10 Pages | IRF | ||
IRFU9024N | Ultra Low On-Resistance 文件:2.20964 Mbytes Page:10 Pages | KERSEMI | ||
IRFU9024N | isc P-Channel MOSFET Transistor 文件:305.11 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFU9024N | -55V 单个 P 通道 HEXFET Power MOSFET, 采用I-Pak 封装 | Infineon 英飞凌 | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
ULTRA LOW ON-ORSISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
HEXFET POWER MOSFET | Infineon 英飞凌 | |||
Ultra Low On-Resistance 文件:1.38963 Mbytes Page:11 Pages | IRF | |||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Military Managed 24-Port 1G Ethernet Router/Switch FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha | ENERCON | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | Heyco | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | Heyco | |||
Cooper-Wheelock AS/AH Serles 文件:240.06 Kbytes Page:4 Pages | Honeywell 霍尼韦尔 |
IRFU9024N产品属性
- 类型
描述
- 型号
IRFU9024N
- 功能描述
MOSFET P-CH 55V 11A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
7512 |
绝对原装现货,价格低,欢迎询购! |
|||
IR |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
0135+ |
TO-251 |
1350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2025+ |
TO-251 |
5216 |
全新原厂原装产品、公司现货销售 |
|||
Infineon |
23+ |
IPAK |
15500 |
英飞凌优势渠道全系列在售 |
|||
IR |
24+ |
TO-251 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
25+ |
TO-251 |
32360 |
INFINEON/英飞凌全新特价IRFU9024NPBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
TO-251 |
65400 |
IRFU9024N规格书下载地址
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