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位置：首页 > IC中文资料第938页 > IRFU9024N

IRFU9024N价格

参考价格：￥1.5143

型号：IRFU9024NPBF 品牌：INTERNATIONAL 备注：这里有IRFU9024N多少钱，2025年最近7天走势，今日出价，今日竞价，IRFU9024N批发/采购报价，IRFU9024N行情走势销售排行榜，IRFU9024N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU9024N

60V P-Channel Enhancement Mode MOSFET

General Features RDS(ON)

EVVOSEMI

翊欧

IRFU9024N

Ultra Low On-Resistance

文件：2.20964 Mbytes Page：10 Pages

KERSEMI

IRFU9024N

isc P-Channel MOSFET Transistor

文件：305.11 Kbytes Page：2 Pages

ISC

无锡固电

IRFU9024N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件：117.92 Kbytes Page：10 Pages

IRF

IRFU9024NCPBF

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFU9024NCPBF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFU9024NCPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFU9024NPBF

ULTRA LOW ON-ORSISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFU9024NPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFU9024NPBF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFU9024NPBF

HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFU9024NPBF

Ultra Low On-Resistance

文件：1.38963 Mbytes Page：11 Pages

IRF

9024

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

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9024

Military Managed 24-Port 1G Ethernet Router/Switch

FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha

ENERCON

9024

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

HeycoHeyco.

海科

9024F

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

HeycoHeyco.

海科

AS9024

Cooper-Wheelock AS/AH Serles

文件：240.06 Kbytes Page：4 Pages

GAMEWELL-FCI

霍尼韦尔

IRFU9024N产品属性

  • 类型

    描述

  • 型号

    IRFU9024N

  • 功能描述

    MOSFET P-CH 55V 11A I-PAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFU9024N供应商更多...

更新时间：2025-8-7 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市星佑电子有限公司
IRFU9024N
IR
05+
TO-251
12000
原装进口
询价
深圳市得捷芯城科技有限公司
IRFU9024NPBF
IR(国际整流器)
24+
N/A
9398
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市坤融电子科技有限公司
IRFU9024NPBF
IR
24+
TO-251
120
只做原厂渠道 可追溯货源
询价
艾睿（深圳）半导体有限公司
IRFU9024N
IR
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市华斯顿科技有限公司
IRFU9024N
IR
25+23+
TO-251
43264
绝对原装正品全新进口深圳现货
询价
深圳市昌和盛利电子有限公司
IRFU9024NPBF
23+
TO-251
59896
专注原装正品现货特价中量大可定
询价
深圳市宏世佳电子科技有限公司
IRFU9024N
IR
2025+
TO-251
5216
全新原厂原装产品、公司现货销售
询价
深圳市富芯乐电子科技有限公司
IRFU9024NPBF
INFINEON/英飞凌
25+
TO-251
4400
全新原装现货特价销售,欢迎来电查询
询价
深圳市科恒伟业电子有限公司
IRFU9024N
IR
2016+
TO-251
6523
只做进口原装现货!假一赔十!
询价
柒号芯城电子商务(深圳)有限公司
IRFU9024N
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价

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