IRFU9024N价格

参考价格:¥1.5143

型号:IRFU9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFU9024N多少钱,2025年最近7天走势,今日出价,今日竞价,IRFU9024N批发/采购报价,IRFU9024N行情走势销售排行榜,IRFU9024N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFU9024N

60V P-Channel Enhancement Mode MOSFET

General Features RDS(ON)

EVVOSEMI

翊欧

IRFU9024N

-55V 单个 P 通道 HEXFET Power MOSFET, 采用I-Pak 封装

Infineon

英飞凌

IRFU9024N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件:117.92 Kbytes Page:10 Pages

IRF

IRFU9024N

isc P-Channel MOSFET Transistor

文件:305.11 Kbytes Page:2 Pages

ISC

无锡固电

IRFU9024N

Ultra Low On-Resistance

文件:2.20964 Mbytes Page:10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

ULTRA LOW ON-ORSISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

HEXFET POWER MOSFET

Infineon

英飞凌

Ultra Low On-Resistance

文件:1.38963 Mbytes Page:11 Pages

IRF

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Military Managed 24-Port 1G Ethernet Router/Switch

FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha

ENERCON

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Cooper-Wheelock AS/AH Serles

文件:240.06 Kbytes Page:4 Pages

GAMEWELL-FCI

IRFU9024N产品属性

  • 类型

    描述

  • 型号

    IRFU9024N

  • 功能描述

    MOSFET P-CH 55V 11A I-PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-23 18:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
TO-251
59896
专注原装正品现货特价中量大可定
IR
23+
TO-251
22000
原装现货假一罚十
IR(国际整流器)
24+
N/A
9398
原厂可订货,技术支持,直接渠道。可签保供合同
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
24+
TO-251
20540
保证进口原装现货假一赔十
IR
25+23+
TO-251
43264
绝对原装正品全新进口深圳现货
IR
24+
TO-251
120
只做原厂渠道 可追溯货源
24+
TO-251TO-252
28575
Infineon(英飞凌)
24+
TO-251
7845
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
25+
TO-251
32360
INFINEON/英飞凌全新特价IRFU9024NPBF即刻询购立享优惠#长期有货

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