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位置：首页 > IC中文资料 > IRFU410

IRFU410价格

参考价格：￥11.2495

型号：IRFU4104PBF 品牌：International 备注：这里有IRFU410多少钱，2026年最近7天走势，今日出价，今日竞价，IRFU410批发/采购报价，IRFU410行情走势销售排行榜，IRFU410报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFU410

1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

INTERSIL

IRFU410

1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

IRFU4104

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4104

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4104

Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRFU4104PBF

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFU4104PBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRFU4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFU4105Z

采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

IRFU4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFU410B

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

IRFU4104

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：247.48 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4104

Advanced Process Technology

文件：190.64 Kbytes Page：12 Pages

IRF

IRFU4104PBF

Advanced Process Technology

文件：330.36 Kbytes Page：11 Pages

IRF

IRFU4104PBF

AUTOMOTIVE MOSFET

文件：4.06248 Mbytes Page：11 Pages

KERSEMI

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A⑤)

INFINEON

英飞凌

IRFU4105

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：290.31 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes Page：10 Pages

IRF

IRFU4105Z

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：247.45 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFU410A

Advanced Power MOSFET

文件：202.42 Kbytes Page：7 Pages

FAIRCHILD

仙童半导体

BF410B

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

PHILIPS

飞利浦

BF410D

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

PHILIPS

飞利浦

MJ410

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

MOTOROLA

摩托罗拉

SF410

POWER RECTIFIERS(4.0A,500-1000V)

MOSPEC

统懋

CLC410

Fast Settling, Video Op Amp with Disable

文件：519.409 Kbytes Page：8 Pages

NSC

国半

IRFU410产品属性

  • 类型

    描述

  • Package ：

    IPAK (TO-251)

  • VDS max：

    55.0V

  • RDS (on) max：

    24.5mΩ

  • RDS (on)(@10V) max：

    24.5mΩ

  • Polarity ：

    N

  • ID (@ TC=100°C) max：

    21.0A

  • ID (@ TC=25°C) max：

    30.0A

  • ID  max：

    30.0A

  • Ptot max：

    48.0W

  • QG ：

    18.0nC 

  • Mounting ：

    THT

  • Qgd ：

    7.0nC 

  • Tj max：

    175.0°C

  • RthJC max：

    3.12K/W

  • VGS max：

    20.0V

IRFU410供应商更多...

更新时间：2026-8-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
IRFU410A
FSC
2016+
TO-251
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
IRFU410A
FSC
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市科恒伟业电子有限公司
IRFU4104-701TRP
IR
2450+
TO-251
9850
只做原装正品现货或订货假一赔十!
询价
深圳市富利微电子科技有限公司
IRFU4105ZPBF
Infineon/英飞凌
26+
TO-252-2(DPAK)
25000
原装正品,假一赔十!
询价
深圳市华斯顿科技有限公司
IRFU4104-701TRP
IR
25+23+
TO-251
28856
绝对原装正品全新进口深圳现货
询价
深圳市华来深电子有限公司
IRFU4105ZPBF
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市胜彬电子有限公司
IRFU4104TRL-701
IR
22+
SOT252
8000
原装正品支持实单
询价
深圳市恒凯威科技开发有限公司
IRFU4105ZPBF
Infineon/英飞凌
21+
TO-252-2(DPAK)
6820
只做原装,质量保证
询价
深圳市恒达亿科技有限公司
IRFU410A
IRF
25+
TOP-251
4500
全新原装、诚信经营、公司现货销售
询价
深圳市一线半导体有限公司
IRFU4104PBF
IR
24+
TO-251
2200
询价

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IRFU410数据表相关新闻

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