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位置：首页 > IC中文资料第1601页 > IRFU4105

IRFU4105价格

参考价格：￥3.2963

型号：IRFU4105ZPBF 品牌：INTERNATIONAL 备注：这里有IRFU4105多少钱，2026年最近7天走势，今日出价，今日竞价，IRFU4105批发/采购报价，IRFU4105行情走势销售排行榜，IRFU4105报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFU4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes Page：10 Pages

IRF

IRFU4105

isc N-Channel MOSFET Transistor

文件：290.31 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A⑤)

INFINEON

英飞凌

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFU4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105Z

isc N-Channel MOSFET Transistor

文件：247.45 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105Z

采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

IRFU4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FAIRCHILD

仙童半导体

AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

AUIRFR4105

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

INFINEON

英飞凌

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

IRFU4105产品属性

  • 类型

    描述

  • 型号

    IRFU4105

  • 功能描述

    MOSFET N-CH 55V 27A I-PAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFU4105供应商更多...

更新时间：2026-3-1 21:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
IRFU4105PBF
IR
25+23+
TO-251
28855
绝对原装正品全新进口深圳现货
询价
深圳市明嘉莱科技有限公司
IRFU4105
IR
24+
TO 251
161267
明嘉莱只做原装正品现货
询价
深圳市恒凯威科技开发有限公司
IRFU4105ZPBF
Infineon/英飞凌
21+
TO-252-2(DPAK)
6820
只做原装,质量保证
询价
深圳市一线半导体有限公司
IRFU4105ZPBF
IR
24+
TO-251
1198
询价
深圳市科恒伟业电子有限公司
IRFU4105PBF
INFINEON/英飞凌
2450+
TO-251
9850
只做原装正品现货或订货假一赔十!
询价
深圳市威雅利发展有限公司
IRFU4105
IR
10+
TO251
675
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市向鸿伟业电子有限公司
IRFU4105ZPBF
INFINEON/英飞凌
2407+
30098
全新原装!仓库现货,大胆开价!
询价
深圳市富利微电子科技有限公司
IRFU4105ZPBF
Infineon/英飞凌
25+
TO-252-2(DPAK)
25000
原装正品,假一赔十!
询价
深圳市恒创达实业有限公司
IRFU4105PBF
IR
17+
TO-251
6200
100%原装正品现货
询价
洪芯国际半导体（深圳）有限公司
IRFU4105Z
IR
26+
TSSOP14
86720
全新原装正品价格最实惠 假一赔百
询价

IRFU4105芯片相关品牌

IRFU4105规格书下载地址

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