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位置：首页 > IC中文资料第1601页 > IRFU4105

IRFU4105价格

参考价格：￥3.2963

型号：IRFU4105ZPBF 品牌：INTERNATIONAL 备注：这里有IRFU4105多少钱，2025年最近7天走势，今日出价，今日竞价，IRFU4105批发/采购报价，IRFU4105行情走势销售排行榜，IRFU4105报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes Page：10 Pages

IRF

IRFU4105

isc N-Channel MOSFET Transistor

文件：290.31 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFU4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFU4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFU4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFU4105Z

isc N-Channel MOSFET Transistor

文件：247.45 Kbytes Page：2 Pages

ISC

无锡固电

IRFU4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

4105

Relampable Socket

文件：90.94 Kbytes Page：1 Pages

VCC

Visual Communications Company

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

Advanced Crystal Technology

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

IRFU4105产品属性

  • 类型

    描述

  • 型号

    IRFU4105

  • 功能描述

    MOSFET N-CH 55V 27A I-PAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFU4105供应商更多...

更新时间：2025-8-7 15:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华来深电子有限公司
IRFU4105
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市科翼源电子有限公司
IRFU4105
IR
23+
TO251
3175
原厂原装正品
询价
深圳市星佑电子有限公司
IRFU4105
IR
05+
TO-251
12000
原装进口
询价
深圳市宏捷佳电子科技有限公司
IRFU4105
IR
2023+
I-PAK
50000
原装现货
询价
深圳市安富世纪电子有限公司
IRFU4105
Infineon Technologies
23+
原装
8000
只做原装现货
询价
天津市博通航睿技术有限公司
IRFU4105
Infineon Technologies
23+
原装
7000
询价
深圳市创新迹电子有限公司
IRFU4105
IR
2022+
TO-251
30000
进口原装现货供应,原装 假一罚十
询价
深圳市坤融电子科技有限公司
IRFU4105PBF
IR
24+
TO-251
13304
只做原厂渠道 可追溯货源
询价
深圳市华斯顿科技有限公司
IRFU4105PBF
IR
25+23+
TO-251
28855
绝对原装正品全新进口深圳现货
询价
深圳市昌和盛利电子有限公司
IRFU4105
IR
23+
TO-251
35890
询价

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