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IRFU4105价格
参考价格：￥3.2963
型号：IRFU4105ZPBF 品牌：INTERNATIONAL 备注：这里有IRFU4105多少钱，2024年最近7天走势，今日出价，今日竞价，IRFU4105批发/采购报价，IRFU4105行情走势销售排行榜，IRFU4105报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU4105 | UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. |  |   |
IRFU4105 | PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A?? 文件：144.58 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFU4105 | iscN-ChannelMOSFETTransistor 文件：290.31 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET(Vds=55V,Rds(on)=24.5mohm,Id=30A) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
iscN-ChannelMOSFETTransistor 文件：247.45 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedProcessTechnology 文件：335.84 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | | | |
RelampableSocket 文件：90.94 Kbytes Page：1 Pages | VCC Visual Communications Company |  | | |
trueone-port,surface-acoustic-wave(SAW)resonator 文件：58.89 Kbytes Page：3 Pages | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 |  | | |
AdvancedPlanarTechnologyLowOn-Resistance 文件：244.23 Kbytes Page：12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRFU4105产品属性
- 类型
描述
- 型号
IRFU4105
- 功能描述
MOSFET N-CH 55V 27A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO251 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
23+ |
N/A |
45990 |
正品授权货源可靠 |
||||
InfineonTechnologies |
19+ |
TO-251-3ShortLeads |
56800 |
IPak |
|||
IR |
2020+ |
I-pak |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
21+ROHS |
TO-251 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IR |
2023+ |
I-pak |
16800 |
芯为只有原装,公司现货 |
|||
IR |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
22+ |
TO-251 |
13304 |
只做原装进口 免费送样!! |
|||
IR |
05+ |
TO-251 |
12000 |
原装进口 |
IRFU4105芯片相关品牌
IRFU4105规格书下载地址
IRFU4105参数引脚图相关
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2019-11-1
DdatasheetPDF页码索引
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