4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The str

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR220, SiHFR220) • Straight lead (IRFU220, SiHFU220) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

iscN-Channel MOSFET Transistor

文件：340.72 Kbytes Page：2 Pages

Power MOSFET

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Low RDS(ON) : 0.626 Ω (Typ.)

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

SMPS MOSFET

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies ● T

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • Uninterruptible power supply • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications •

HEXFET Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

HEXFEP Power MOSFET

HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

isc N-Channel MOSFET Transistor

文件：345.53 Kbytes Page：2 Pages

Isc N-Channel MOSFET Transistor

文件：319.78 Kbytes Page：2 Pages

功率 MOSFET，N 沟道，B-FET，200 V，4.6 A，0.9 Ω，IPAK

采用 I-Pak 封装的 200V 单 N 沟道功率 MOSFET

N-Channel 200 V (D-S) MOSFET

文件：1.5654 Mbytes Page：6 Pages

SMPS MOSFET

文件：3.83872 Mbytes Page：10 Pages

High frequency DC-DC converters

文件：230.1 Kbytes Page：11 Pages

Power MOSFET

文件：816.14 Kbytes Page：13 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1/4 FLAT PLUG PHONE PLUGS

文件：26.97 Kbytes Page：1 Pages

SMK MALE TO MALE RADIUS RIGHT ANGLE ADAPTEER

文件：131.57 Kbytes Page：1 Pages

The 2AG Special Fuses with various voltage ratings provide special electric performance as required

文件：698.67 Kbytes Page：4 Pages

Mini 7/8 Male 4 Pin Field Attachable

文件：173.67 Kbytes Page：2 Pages