General Description

These N-Channel enhancement mode power field effect

transistors are produced using ON Semiconductor’s

proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

Features

• 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 10 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability