型号 功能描述 生产厂家 企业 LOGO 操作
IRFU13N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

IRFU13N15D

SMPS MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

KERSEMI

IRFU13N15D

isc N-Channel MOSFET Transistor

文件:246.95 Kbytes Page:2 Pages

ISC

无锡固电

IRFU13N15D

MOSFET N-CH 150V 14A I-PAK

Infineon

英飞凌

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

KERSEMI

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

IRF

High frequency DC-DC converters

文件:228.09 Kbytes Page:11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

SMPS MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

KERSEMI

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

KERSEMI

IRFU13N15D产品属性

  • 类型

    描述

  • 型号

    IRFU13N15D

  • 功能描述

    MOSFET N-CH 150V 14A I-PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-28 9:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-251
4500
只做原装正品现货 欢迎来电查询15919825718
IR
23+
TO-251
8773
原厂原装正品
IR
06+
TO-251
195
IR
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
23+24
TO-251
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
IR
2450+
TO-251
9850
只做原装正品现货或订货假一赔十!
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
FCS
23+
TO-2203L
69820
终端可以免费供样,支持BOM配单!
IR
23+
TO-251
35890
Infineon Technologies
23+
原装
7000

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