型号 功能描述 生产厂家&企业 LOGO 操作
IRFU13N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF
IRFU13N15D

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU13N15D

iscN-ChannelMOSFETTransistor

文件:246.95 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SMPSMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRF

HighfrequencyDC-DCconverters

文件:228.09 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

N-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

N-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF

SMPSMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFU13N15D产品属性

  • 类型

    描述

  • 型号

    IRFU13N15D

  • 功能描述

    MOSFET N-CH 150V 14A I-PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
6273
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
06+
TO-251
195
IR
2016+
TO-251
6528
房间原装进口现货假一赔十
IR
25+23+
TO-251
28144
绝对原装正品全新进口深圳现货
IR
24+
TO-251
195
只做原厂渠道 可追溯货源
IR
24+
TO-251
513
IR
22+
TO-251
25000
只做原装进口现货,专注配单
Infineon Technologies
23+
原装
7000
IR
1923+
TO-251
6896
原装进口现货库存专业工厂研究所配单供货

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