位置：首页 > IC中文资料第6809页 > IRFSL38N20D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFSL38N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current | IRF |   | |
IRFSL38N20D | HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | |
IRFSL38N20D | 采用 TO-262 封装的 200V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
HEXFET짰 Power MOSFET 文件：589.27 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFSL38N20D产品属性
- 类型
描述
- 型号
IRFSL38N20D
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
10000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR/KA |
25+ |
TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
TO-262 |
10000 |
专做原装正品,假一罚百! |
|||
INFINEON/英飞凌 |
2407+ |
con |
10750 |
只有原装!量大可以订!一片起卖! |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
Infineon(英飞凌) |
2447 |
TO262 |
115000 |
1000个/管一级代理专营品牌!原装正品,优势现货,长 |
|||
IR |
23+ |
TO-262 |
7300 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRFSL38N20D规格书下载地址
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DdatasheetPDF页码索引
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