位置：首页 > IC中文资料 > IIRFB38N20D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IIRFB38N20D | N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 |   | |
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
HEXFET Power MOSFET Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan | IRF | | ||
N-Channel MOSFET Transistor 文件：339.21 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
21+ |
QFN |
10000 |
原装现货假一罚十 |
|||
ST(意法半导体) |
2021+ |
LGA-12(2x2) |
499 |
||||
ST/意法半导体 |
23+ |
LGA-12 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
25 |
LGA-12 |
6000 |
原装正品 |
|||
ST |
24+ |
SMD |
17900 |
加速计 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
原装现货,实单价优 |
|||
ST意法 |
20+ |
LGA12 |
17000 |
加速度计,只做全新原装 |
|||
ST |
26+ |
LGA |
86720 |
全新原装正品价格最实惠 假一赔百 |
IIRFB38N20D规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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